2SK3077
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3077
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
Unit: mm
l
Output Power
l
Gain
l
Drain Efficiency
: P
O
= 15.0 dBmW (Min.)
: G
P
= 15.0 dB (Min.)
:
畏
D
= 20% (Typ.)
MAXIMUM RATINGS
(Ta = 25掳C)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Channel Temperature
Storage Temperature Range
SYMBOL
V
DSS
V
GSS
I
D
P
D*
T
ch
T
stg
RATING
10
5
0.1
0.1
150
鈭?5~150
UNIT
V
V
A
W
掳C
掳C
*:
Tc = 25掳C When mounted on a 1.6 mm glass epoxy PCB
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2鈭?K1D
MARKING
1
2001-12-26
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