2SK3387
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
-F-MOSV)
2SK3387
Switching Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
路
路
路
路
路
4 V gate drive
Low drain-source ON resistance: R
DS (ON)
= 0.08
鈩?typ.)
High forward transfer admittance:
茂Y
fs
茂
=
17
S (typ.)
Low leakage current: I
DSS
=
100
碌A (V
DS
=
150
V)
Enhancement-mode: V
th
= 0.8~2.0 V (V
DS
=
10
V, I
D
=
1
mA)
Maximum Ratings
(Ta
=
25掳C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
DC
(Note 1)
Pulse (Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
150
150
卤20
18
54
100
176
18
10
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
掳C
掳C
Drain power dissipation (Tc
=
25掳C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-97
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
R
th (ch-c)
Max
1.25
Unit
掳C/W
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
4
Note 1: Please use devices on condition that the channel temperature is
below 150掳C.
Note 2: V
DD
=
50 V, T
ch
=
25掳C (initial), L
=
800
mH,
R
G
=
25
W,
I
AR
=
18 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2
3
1
2002-07-22
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