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2SK3455 Datasheet

  • 2SK3455

  • NEC [SWITCHING N-CHANNEL POWER MOSFET]

  • 66.66KB

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3455
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3455 is N-channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, designed for high voltage applications
such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
2SK3455
PACKAGE
Isolated TO-220
FEATURES
鈥ow
gate charge
Q
G
= 30 nC TYP. (V
DD
= 400 V, V
GS
= 10 V, I
D
= 12 A)
鈥ate
voltage rating
卤30
V
鈥ow
on-state resistance
R
DS(on)
= 0.60
鈩?/div>
MAX. (V
GS
= 10 V, I
D
= 6.0 A)
鈥valanche
capability ratings
鈥solated
TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
掳C
)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25掳C)
Drain Current (Pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
500
卤30
卤12
卤36
2.0
50
150
鈭?5
to +150
12
103
V
V
A
A
W
W
掳C
掳C
A
mJ
Total Power Dissipation (T
A
= 25掳C)
Total Power Dissipation (T
C
= 25掳C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
I
AS
E
AS
Note2
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2.
Starting T
ch
= 25掳C, V
DD
= 150 V, R
G
= 25
鈩?
V
GS
= 20
鈫?/div>
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14757EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
漏
2000

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