鈥?/div>
UL E78996 approved
Warp Speed IGBT
V
CES
= 600V
V
CE(on) typ.
= 2.3V @
V
GE
= 15V, I
C
= 50A
T
C
= 25掳C
Benefits
鈥?Optimized for Welding, UPS and SMPS
Applications
鈥?Operating Frequencies > 20 kHz Hard
Switching, >200 kHz Resonant Mode
鈥?Low EMI, requires Less Snubbing
鈥?Direct Mounting to Heatsink
鈥?PCB Solderable Terminals
鈥?Very Low Junction-to-Case Thermal
Resistance
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
C
I
CM
I
LM
I
F
Max
600
@ T
C
= 25掳C
@ T
C
= 109掳C
114
50
350
350
@ T
C
= 109掳C
34
200
卤 20
2500
658
263
@ T
C
= 25掳C
@ T
C
= 100掳C
Units
V
A
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
I
FM
V
GE
V
ISOL
P
D
V
W
www.irf.com
1