鈥?/div>
N Channel Application Specific MOSFETs
Ideal for Mobile DC-DC Converters
Low Conduction Losses
Low Switching Losses
Lead-Free
S
S
S
G
1
8
7
IRF7807PbF
IRF7807APbF
A
D
D
D
D
2
3
6
Description
These new devices employ advanced HEXFET
Power MOSFET technology to achieve an
unprecedented balance of on-resistance and gate
charge. The reduced conduction and switching losses
make them ideal for high efficiency DC-DC
Converters that power the latest generation of mobile
microprocessors.
A pair of IRF7807 devices provides the best cost/
performance solution for system voltages, such as 3.3V
and 5V.
4
5
SO-8
T o p V ie w
Device Features
IRF7807 IRF7807A
Vds
30V
30V
Rds(on) 25m鈩?/div>
25m鈩?/div>
Qg
17nC
17nC
Qsw
5.2nC
Qoss
16.8nC 16.8nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
鈮?/div>
4.5V)
Pulsed Drain Current聛
Power Dissipation
25掳C
70掳C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)聛
Pulsed source Current
T
J
, T
STG
I
S
I
SM
2.5
66
25掳C
70掳C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
8.3
6.6
66
2.5
1.6
鈥?5 to 150
2.5
66
掳C
A
IRF7807
30
卤12
8.3
6.6
66
W
A
IRF7807A
Units
V
Thermal Resistance
Parameter
Maximum Junction-to-Ambient聝
R
胃JA
Max.
50
Units
掳C/W
www.irf.com
1
09/22/04
next