IRFD110
Data Sheet
July 1999
File Number
2314.3
1A, 100V, 0.600 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power 铿乪ld
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a speci铿乪d level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Features
鈥?1A, 100V
鈥?r
DS(ON)
= 0.600鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
IRFD110
PACKAGE
HEXDIP
BRAND
IRFD110
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
HEXDIP
DRAIN
GATE
SOURCE
4-269
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
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Intersil Corporation 1999
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