IRFD120
Data Sheet
July 1999
File Number
2315.3
1.3A, 100V, 0.300 Ohm, N-Channel
Power MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a speci铿乪d level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power 铿乪ld
effect transistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17401.
Features
鈥?1.3A, 100V
鈥?r
DS(ON)
= 0.300鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
IRFD120
PACKAGE
HEXDIP
BRAND
IRFD120
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
HEXDIP
DRAIN
GATE
SOURCE
4-275
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
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Intersil Corporation 1999
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