IRFR320, IRFU320
Data Sheet
July 1999
File Number
2412.3
3.1A, 400V, 1.800 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power 铿乪ld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
speci铿乪d level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17404.
Features
鈥?3.1A, 400V
鈥?r
DS(ON)
= 1.800鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
IRFR320
IRFU320
PACKAGE
TO-252AA
TO-251AA
BRAND
IFR320
IFU320
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e., IRFR3209A.
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
GATE
DRAIN
(FLANGE)
DRAIN (FLANGE)
DRAIN
SOURCE
4-395
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
漏
Intersil Corporation 1999
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