ISL9K860P3
April 2002
ISL9K860P3
8A, 600V Stealth鈩?Dual Diode
General Description
The ISL9K860P3 is a Stealth鈩?dual diode optimized
for low loss performance in high frequency hard
switched applications. The Stealth鈩?family exhibits low
reverse recovery current (I
RRM
) and exceptionally soft
recovery under typical operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
RRM
and short t
a
phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth鈩?diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
Features
鈥?Soft Recovery. . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 2.5
鈥?Fast Recovery . . . . . . . . . . . . . . . . . . . . t
rr
< 25ns
鈥?Operating Temperature . . . . . . . . . . . . . . . 175
o
C
鈥?Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . 600V
鈥?Avalanche Energy Rated
Applications
鈥?Switch Mode Power Supplies
鈥?Hard Switched PFC Boost Diode
鈥?UPS Free Wheeling Diode
鈥?Motor Drive FWD
鈥?SMPS FWD
鈥?Snubber Diode
Package
JEDEC TO-220AB
Symbol
K
ANODE 2
CATHODE
ANODE 1
CATHODE
(FLANGE)
A
1
A
2
Device Maximum Ratings (per leg)
T
C
= 25掳C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 147 C)
Total Device Current (Both Legs)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
o
Ratings
600
600
600
8
16
16
100
85
20
-55 to 175
300
260
Units
V
V
V
A
A
A
A
W
mJ
掳C
掳C
掳C
CAUTION: Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
漏2002 Fairchild Semiconductor Corporation
ISL9K860P3 Rev. C
1
2
3
4
5
6
