LM118H Datasheet

  • LM118H

  • National Semiconductor [Operational Amplifiers]

  • 593.84KB

  • NSC

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LM118/LM218/LM318 Operational Amplifiers
August 2000
LM118/LM218/LM318
Operational Amplifiers
General Description
The LM118 series are precision high speed operational am-
plifiers designed for applications requiring wide bandwidth
and high slew rate. They feature a factor of ten increase in
speed over general purpose devices without sacrificing DC
performance.
The LM118 series has internal unity gain frequency compen-
sation. This considerably simplifies its application since no
external components are necessary for operation. However,
unlike most internally compensated amplifiers, external fre-
quency compensation may be added for optimum perfor-
mance. For inverting applications, feedforward compensa-
tion will boost the slew rate to over 150V/碌s and almost
double the bandwidth. Overcompensation can be used with
the amplifier for greater stability when maximum bandwidth
is not needed. Further, a single capacitor can be added to
reduce the 0.1% settling time to under 1 碌s.
The high speed and fast settling time of these op amps make
them useful in A/D converters, oscillators, active filters,
sample and hold circuits, or general purpose amplifiers.
These devices are easy to apply and offer an order of
magnitude better AC performance than industry standards
such as the LM709.
The LM218 is identical to the LM118 except that the LM218
has its performance specified over a 鈭?5藲C to +85藲C tem-
perature range. The LM318 is specified from 0藲C to +70藲C.
Features
n
n
n
n
n
n
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15 MHz small signal bandwidth
Guaranteed 50V/碌s slew rate
Maximum bias current of 250 nA
Operates from supplies of
5V to
20V
Internal frequency compensation
Input and output overload protected
Pin compatible with general purpose op amps
Fast Voltage Follower
(Note 1)
00776613
Note 1:
Do not hard-wire as voltage follower (R1
鈮?/div>
5 k鈩?
漏 2004 National Semiconductor Corporation
DS007766
www.national.com

LM118H 产品属性

  • National Semiconductor (TI)

  • 1

  • 80 dB

  • 4 mV at +/- 20 V

  • Through Hole

  • TO-99

  • 70 V/us at +/- 15 V

  • No

  • + 125 C

  • Bulk

  • - 55 C

  • 500

  • 8 mA at +/- 20 V

  • Bipolar

  • 106.02 dB

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