M63806P Datasheet_PDF文件下载_芯片资料查询

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63806P/FP/KP

8-UNIT 300mA TRANSISTOR ARRAY

PIN CONFIGURATION

IN1鈫?/div>

IN2

鈫?/div>

IN3

鈫?/div>

INPUT

1

2

3

18

鈫?/div>

O1

17

鈫?/div>

O2

16

鈫?/div>

O3

15

鈫?/div>

O4

14

鈫?/div>

O5

13

鈫?/div>

O6

12

鈫?/div>

O7

11

鈫?/div>

O8

10

DESCRIPTION

M63806P/FP/KP are eight-circuit Single transistor arrays.

The circuits are made of NPN transistors. Both the semicon-

ductor integrated circuits perform high-current driving with

extremely low input-current supply.

IN4

鈫?/div>

4

IN5

鈫?/div>

5

OUTPUT

IN6

鈫?/div>

6

FEATURES

q

Three package configurations (P, FP, and KP)

q

Medium breakdown voltage (BV

CEO

鈮?/div>

35V)

q

Synchronizing current (I

C(max)

= 300mA)

q

Low output saturation voltage

q

Wide operating temperature range (Ta = 鈥?0 to +85掳C)

IN7

鈫?/div>

IN8

鈫?/div>

GND

7

8

9

鈫?/div>

NC

Package type

18P4G(P)

NC

1

20

NC

IN1

鈫?/div>

2

19

鈫?/div>

O1

18

鈫?/div>

O2

17

鈫?/div>

O3

16

鈫?/div>

O4

15

鈫?/div>

O5

14

鈫?/div>

O6

13

鈫?/div>

O7

12

鈫?/div>

O8

11

鈫?/div>

NC

APPLICATION

Driving of digit drives of indication elements (LEDs and

lamps) with small signals

IN2

鈫?/div>

3

IN3

鈫?/div>

4

IN4

鈫?/div>

5

INPUT

IN5

鈫?/div>

6

IN6

鈫?/div>

7

IN7

鈫?/div>

8

IN8

鈫?/div>

9

OUTPUT

FUNCTION

The M63806P/FP/KP each have eight circuits consisting of

NPN transistor. The transistor emitters are all connected to

the GND pin. The transistors allow synchronous flow of

300mA collector current. A maximum of 35V voltage can be

applied between the collector and emitter.

GND

10

NC : No connection

20P2N-A(FP)

Package type

20P2E-A(KP)

CIRCUIT DIAGRAM

OUTPUT

INPUT

2.7K

10K

GND

The eight circuits share the GND.

The diode, indicated with the dotted line, is parasitic, and

cannot be used.

Unit:

鈩?/div>

Jan. 2000

PS22053

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