MBR6035PT Datasheet

  • MBR6035PT

  • Diodes Incorporated [60A SCHOTTKY BARRIER RECTIFIER]

  • 369.39KB

  • DIODES

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MBR6030PT - MBR6045PT
60A SCHOTTKY BARRIER RECTIFIER
Features
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
TO-3P
Dim
A
Min
3.20
4.59
20.80
19.70
2.10
0.51
15.90
1.70
3.10脝
3.50
5.20
1.12
1.93
2.97
11.70
Max
3.50
5.16
21.30
20.20
2.40
0.76
16.40
2.70
3.30脝
4.51
5.70
1.22
2.18
3.22
12.80
H
S
R
P*
*2 Places
N
Q
L
G
A
B
B
C
D
E
G
H
J
K
L
M
N
J
K
C
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 5.6 grams (approx.)
Mounting Position: Any
Marking: Type Number
D
E
M
M
P
Q
R
S
4.30 Typical
All Dimensions in mm
@ T
A
= 25掳C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
C
= 125掳C
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
@ I
F
= 30A, T
C
= 25掳C
@ I
F
= 30A, T
C
= 125掳C
@ I
F
= 60A, T
C
= 25掳C
@ T
C
= 25掳C
@ T
C
= 100掳C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
MBR
6030PT
30
21
MBR
6035PT
35
25
60
500
0.62
0.55
0.75
1.0
50
650
1.0
MBR
6040PT
40
28
MBR
6045PT
45
32
Unit
V
V
A
A
V
FM
I
RM
C
j
R
qJc
T
j,
T
STG
V
mA
pF
K/W
掳C
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
-55 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30053 Rev. B-2
1 of 2
MBR6030PT - MBR6045PT

MBR6035PT PDF文件相关型号

MBR6090PT

MBR6035PT 产品属性

  • 30

  • 分离式半导体产品

  • 二极管,整流器 - 阵列

  • -

  • 750mV @ 60A

  • 1mA @ 35V

  • 60A

  • 35V

  • -

  • 肖特基

  • 快速恢复 = 200mA(Io)

  • 1 对共阴极

  • 通孔

  • TO-3P-3,SC-65-3

  • TO-3P

  • 管件

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