Advanced Technical Information
MIO 1200-33E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
C
C'
C
C
I
C80
= 1200 A
= 3300 V
V
CES
V
CE(sat) typ.
= 3.1 V
G
E'
E
E
E
IGBT
Symbol
V
CES
V
GES
I
C80
I
CM
t
SC
T
C
= 80掳C
t
p
= 1 ms; T
C
= 80掳C
V
CC
= 2500 V; V
CEM CHIP
= < 3300 V;
V
GE
< 15 V; T
VJ
< 125掳C
Conditions
V
GE
= 0 V
Maximum Ratings
3300
卤
20
1200
2400
10
V
V
A
A
碌s
Features
鈥?NPT鲁 IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
鈥?Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
鈥?AC power converters for
- industrial drives
- windmills
- traction
鈥?LASER pulse generator
Symbol
Conditions
Characteristic Values
(T
VJ
= 25掳C, unless otherwise specified)
min. typ. max.
3.1
3.8
6
8
V
V
V
V
CE(sat)
鈶?/div>
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
Q
ge
R
thJC
I
C
= 1200 A; V
GE
= 15 V; T
VJ
= 25掳C
T
VJ
= 125掳C
I
C
= 240 mA; V
CE
= V
GE
V
CE
= 3300 V; V
GE
= 0 V; T
VJ
= 125掳C
V
CE
= 0 V; V
GE
=
卤
20 V; T
VJ
= 125掳C
Inductive load; T
VJ
= 125掳C;
V
GE
= 卤15 V; V
CC
= 1800 V;
I
C
= 1200 A; R
G
= 1.5
鈩?
L
蟽
= 100 nH
120 mA
500 nA
400
200
1070
440
1890
1950
187
11.6
2.2
12.1
ns
ns
ns
ns
mJ
mJ
nF
nF
nF
碌C
0.0085 K/W
417
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
I
C
= 1200 A; V
CE
= 1800 V; V
GE
=
卤
15 V
鈶?/div>
Collector emitter saturation voltage is given at chip level
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2004 IXYS All rights reserved
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