MIO 600-65E11
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
C
C'
3
5
I
C80
= 600 A
= 6500 V
V
CES
V
CE(sat) typ
= 4.2 V
C
7
C
9
G
2
E'
1
E
4
E
6
E
8
IGBT
Symbol
V
CES
V
GES
I
C85
I
CM
t
SC
T
C
= 85掳C
t
p
= 1 ms; T
C
= 85掳C
V
CC
= 4400 V; V
CEM CHIP
=
<
6500 V;
V
GE
< 15 V; T
VJ
< 125掳C
Conditions
Conditions
V
GE
= 0 V
Maximum Ratings
6500
卤
20
600
1200
10
V
V
A
A
碌s
Features
鈥?NPT鲁 IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
鈥?Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
鈥?AC power converters for
- industrial drives
- windmills
- traction
鈥?LASER pulse generator
Symbol
Characteristic Values
(T
VJ
= 25掳C, unless otherwise specified)
min. typ. max.
4.2
5.4
6
8
V
V
V
V
CE(sat)
鈶?/div>
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
Q
ge
R
thJC
I
C
= 600 A; V
GE
= 15 V; T
VJ
= 25掳C
T
VJ
= 125掳C
I
C
= 240 mA; V
CE
= V
GE
V
CE
= 6500 V; V
GE
= 0 V; T
VJ
= 125掳C
V
CE
= 0 V; V
GE
=
卤
20 V; T
VJ
= 125掳C
R
G
= 3.9
鈩?/div>
R
G
= 3.9
鈩?/div>
Inductive load; T
VJ
= 125掳C; R = 2.7
鈩?/div>
G
V
GE
= 卤15 V; V
CC
= 3600 V; R = 2.7
鈩?/div>
G
I
C
= 600 A; L
蟽
= 280 nH
R
G
= 3.9
鈩?/div>
R
G
= 2.7
鈩?/div>
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
I
C
= 600 A; V
CE
= 3600 V; V
GE
=
卤
15 V
120 mA
500 nA
620
270
1500
930
4250
3250
150
7.57
1.46
9.65
ns
ns
ns
ns
mJ
mJ
nF
nF
nF
碌C
0.011 K/W
鈶?/div>
Collector emitter saturation voltage is given at chip level
IXYS reserves the right to change limits, test conditions and dimensions.
0547
漏 2005 IXYS All rights reserved
1-5
MIO600-65E11 产品属性
1
半导体模块
IGBT
-
NPT
单开关
6500V
4.2V @ 15V，600A
600A
120mA
150nF @ 25V
-
标准型
无
底座安装
E11
E11
1
2
3
4
5
