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MMG3001NT1 Datasheet

  • MMG3001NT1

  • Heterojunction Bipolar Transistor Technology (InGaP HBT)

  • 212.00KB

  • 12页

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MMG3001NT1
Rev. 6, 7/2007
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3001NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 40 to 3600 MHz such as Cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF.
Features
鈥?/div>
Frequency: 40 - 3600 MHz
鈥?/div>
P1dB: 18.5 dBm @ 900 MHz
鈥?/div>
Small - Signal Gain: 20 dB @ 900 MHz
鈥?/div>
Third Order Output Intercept Point: 32 dBm @ 900 MHz
鈥?/div>
Single Voltage Supply
鈥?/div>
Internally Matched to 50 Ohms
鈥?/div>
Low Cost SOT - 89 Surface Mount Package
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MMG3001NT1
40 - 3600 MHz, 20 dB
18.5 dBm
InGaP HBT
12
3
CASE 1514 - 02, STYLE 1
SOT - 89
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Small - Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @1dB
Compression
Third Order Output
Intercept Point
Symbol
G
p
IRL
ORL
P1db
IP3
900
MHz
20
- 25
- 22
18.5
32
2140
MHz
18
- 25
- 18
18
31
3500
MHz
16
- 19
- 17
15.5
28.5
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
(2)
Supply Current
(2)
RF Input Power
Storage Temperature Range
Junction Temperature
(3)
Symbol
V
CC
I
CC
P
in
T
stg
T
J
Value
7
300
10
- 65 to +150
150
Unit
V
mA
dBm
掳C
掳C
2. Voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150掳C.
1. V
CC
= 5.6 Vdc, T
C
= 25掳C, 50 ohm system
Table 3. Thermal Characteristics
(V
CC
= 5.6 Vdc, I
CC
= 58 mA, T
C
= 25掳C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
(4)
92.0
Unit
掳C/W
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2004-2007. All rights reserved.
MMG3001NT1
1
RF Device Data
Freescale Semiconductor

MMG3001NT1 PDF文件相关型号

MMG3003NT1,MMG3004NT1,MMG3007NT1,MMG3008NT1,MMG3010NT1,MMG3011NT1

MMG3001NT1 产品属性

  • GaAs MMIC Amplifier Solutions

  • 1,000

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 40MHz ~ 3.6GHz

  • 18.5dBm（70.8mW）

  • 20dB

  • 4.1dB

  • 通用

  • 5.6V

  • 58mA

  • 900MHz

  • TO-243AA

  • 带卷 (TR)

  • MMG3001NT1-NDMMG3001NT1TR

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