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MRF5P21045NR1 Datasheet

  • MRF5P21045NR1

  • Freescale Semiconductor, Inc [RF Power Field-Effect Transis...

  • 421.99KB

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF5P21045N
Rev. 0, 4/2007
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. Dual path topology suitable for Doherty, quadrature, single - ended and
push - pull applications.
鈥?/div>
Typical 2 - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 500 mA,
P
out
= 10 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?14.5 dB
Drain Efficiency 鈥?25.5%
IM3 @ 10 MHz Offset 鈥?- 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset 鈥?- 39 dBc in 3.84 MHz Channel Bandwidth
鈥?/div>
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output
Power
Features
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
200掳C Capable Plastic Package
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5P21045NR1
2110 - 2170 MHz, 10 W AVG., 28 V
2 x W - CDMA, DUAL PATH
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
RF
inA
/V
GSA
3
2 RF
outA
/V
DSA
RF
inB
/V
GSB
4
1 RF
outB
/V
DSB
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
Value
- 0.5, +65
- 0.5, + 15
- 65 to +150
200
Unit
Vdc
Vdc
掳C
掳C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80掳C, 45 W CW
Case Temperature 77掳C, 10 W CW
Symbol
R
胃JC
Value
(1,2)
1.35
1.48
Unit
掳C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF5P21045NR1
1
RF Device Data
Freescale Semiconductor

MRF5P21045NR1 产品属性

  • 500

  • 分离式半导体产品

  • RF FET

  • -

  • LDMOS（双）

  • 2.11GHz

  • 14.5dB

  • 28V

  • 10µA

  • -

  • 500mA

  • 10W

  • 65V

  • TO-270AB

  • TO-270 WB-4

  • 带卷 (TR)

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