您的位置：维库电子市场网 > Datasheet > MRF5S19060MR1

MRF5S19060MR1 Datasheet

  • MRF5S19060MR1

  • RF Power Field Effect Transistors

  • 408.83KB

  • 12页

  • FREESCALE

阅览下载 纠错 0

扫码查看芯片数据手册

上传产品规格书

PDF预览

Freescale Semiconductor
Technical Data
Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Document Number: MRF5S19060M
Rev. 5, 5/2006
RF Power Field Effect Transistors
MRF5S19060MR1
MRF5S19060MBR1
1990 MHz, 12 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 1930 to 1990 MHz. The high gain and broadband
performance of these devices make them ideal for large - signal, common -
source amplifier applications in 28 Volt base station equipment.
鈥?/div>
Typical 2 - carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 750 mA,
P
out
= 12 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?14 dB
Drain Efficiency 鈥?23%
IM3 @ 2.5 MHz Offset 鈥?- 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset 鈥?- 51 dBc in 30 kHz Channel Bandwidth
鈥?/div>
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg.
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Integrated ESD Protection
鈥?/div>
200掳C Capable Plastic Package
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
ARCHIVE INFORMATION
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S19060MR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S19060MBR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25掳C
Derate above 25掳C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +65
- 0.5, +15
218.8
1.25
- 65 to +175
200
Unit
Vdc
Vdc
W
W/掳C
掳C
掳C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75掳C, 12 W CW
Symbol
R
胃JC
Value
(1)
0.80
Unit
掳C/W
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S19060MR1 MRF5S19060MBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION

MRF5S19060MR1 PDF文件相关型号

MRF5S19060NBR1,MRF5S19060NR1,MRF5S19090HR3,MRF5S19090HSR3

MRF5S19060MR1 产品属性

  • 500

  • 分离式半导体产品

  • RF FET

  • -

  • LDMOS

  • 1.93GHz

  • 14dB

  • 28V

  • 10µA

  • -

  • 750mA

  • 12W

  • 65V

  • TO-270AB

  • TO-270 WB-4

  • 带卷 (TR)

MRF5S19060MR1相关型号PDF文件下载

  • 型号
    版本
    描述
    厂商
    下载
  • MRF50
    英文版
    Bel Fuse Inc. [Fast Acting Radial Lead Micro Fuse Series]
    BEL
    MRF50
  • MRF501
    英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72
    ETC
    MRF501
  • MRF502
    英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72
    ETC
    MRF502
  • MRF517
    英文版
    Microsemi
    MRF517
  • MRF521
    英文版
    TRANSISTOR,BJT,PNP,10V V(BR)CEO,70MA I(C),MACRO-X
    MRF521
  • MRF544
    英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
    MRF544
  • MRF545
    英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
    MRF545
  • MRF553
    英文版
    Microsemi
    MRF553
  • MRF555
    英文版
    Motorola, Inc [RF LOW POWER TRANSISTOR NPN SILICON]
    MOTOROLA
    MRF555
  • MRF557
    英文版
    Motorola, Inc [RF LOW POWER TRANSISTOR NPN SILICON]
    MOTOROLA
    MRF557
  • MRF559
    英文版
    Microsemi
    MRF559
  • MRF571
    英文版
    NPN SILICON RF TRANSISTOR
    ASI
    MRF571
  • MRF571
    英文版
    NPN Silicon High-Frequency Transistors
    MOTOROLA
    MRF571
  • MRF571
    英文版
    NPN SILICON RF TRANSISTOR
    ASI [Advan...
    MRF571
  • MRF571
    英文版
    NPN Silicon High-Frequency Transistors
    MOTOROLA [...
    MRF571
  • MRF572
    英文版
    SILICON NPN RF TRANSISTOR
    ASI
    MRF572
  • MRF572
    英文版
    SILICON NPN RF TRANSISTOR
    ASI [Advan...
    MRF572
  • MRF581
    英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI
    MRF581
  • MRF581
    英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
    MRF581
  • MRF586
    英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
    MRF586

您可能感兴趣的PDF文件资料

热门IC型号推荐

©2024 维库电子市场网（www.dzsc.com）　备案号：浙B2-20050339-1 经营许可证：浙B2-20210386版权声明
买家服务热线：0571-85317607 | 买家服务部QQ： QQ:1609526468
卖家服务热线：0571-85317607 | 卖家服务部QQ： QQ:331652727

扫码下载APP，
一键连接广大的电子世界。

在线人工客服

买家服务：
卖家服务：

0571-85317607

客服在线时间周一至周五
9:00-17:30

关注官方微信号，
第一时间获取资讯。

建议反馈
返回顶部

建议反馈

联系人：

联系方式：

按住滑块，拖拽到最右边
>>
感谢您向阿库提出的宝贵意见，您的参与是维库提升服务的动力！意见一经采纳，将有感恩红包奉上哦！

PDF纠错X

投诉电话：0571-85317607 投诉QQ：

如选匿名将无法为您反馈投诉结果，建议实名投诉！