MRF658 Datasheet_PDF文件下载_芯片资料查询

MOTOROLA

The RF Line

SEMICONDUCTOR TECHNICAL DATA

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by MRF658/D

NPN Silicon

RF Power Transistor

Designed for 12.5 Volt UHF large鈥搒ignal, common emitter, class鈥揅 amplifier

applications in industrial and commercial FM equipment operating to 520 MHz.

鈥?/div>

Specified 12.5 Volt, 512 MHz Characteristics

Output Power = 65 Watts

Minimum Gain = 4.15 dB

Minimum Efficiency = 50%

鈥?/div>

Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters

from 400 to 520 MHz

鈥?/div>

Built鈥揑n Matching Network for Broadband Operation

鈥?/div>

Triple Ion Implanted for More Consistent Characteristics

鈥?/div>

Implanted Emitter Ballast Resistors for Improved Ruggedness

鈥?/div>

Silicon Nitride Passivated

鈥?/div>

Capable of Surviving Load Mismatch Stress at all Phase Angles with

20:1 VSWR @ 15.5 Vdc and 2.0 dB Overdrive

MRF658

65 W, 512 MHz

RF POWER TRANSISTOR

NPN SILICON

CASE 316鈥?1, STYLE 1

MAXIMUM RATINGS

Rating

Collector鈥揈mitter Voltage

Emitter鈥揃ase Voltage

Collector Current 鈥?Continuous

Total Device Dissipation @ TC = 25掳C

Derate above 25掳C

Storage Temperature Range

Symbol

VCEO

VCES

VEBO

IC

PD

Tstg

Value

16.5

38

4.0

15

175

1.0

鈥?65 to +150

Unit

Vdc

Adc

Watts

W/掳C

掳C

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

R

胃JC

Max

1.0

Unit

掳C/W

ELECTRICAL CHARACTERISTICS

(TC = 25掳C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector鈥揈mitter Breakdown Voltage

(IC = 50 mAdc, IB = 0)

Collector鈥揈mitter Breakdown Voltage

(IC = 50 mAdc, VBE = 0)

Emitter鈥揃ase Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector Cutoff Current

(VCE = 15 Vdc, VBE = 0, TC = 25掳C)

V(BR)CEO

V(BR)CES

V(BR)EBO

ICES

16.5

38

4.0

鈥?/div>

29

45

4.6

0.1

鈥?/div>

10

Vdc

mAdc

(continued)

REV 7

漏

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1997

MRF658

1

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