NAND01GW3A2BE06 Datasheet

  • NAND01GW3A2BE06

  • Numonyx B.V [Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/26...

  • 1171.29KB

  • NUMONYX   NUMONYX

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NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
Known Good Die, 1 Gbit (x 8/x 16),
528 Byte/264 word page, 3 V, NAND Flash memory
Features
鈻?/div>
High density NAND Flash memory
鈥?1 Gbit memory array
鈥?32 Mbit spare area
鈥?Cost effective solutions for mass storage
applications
NAND interface
鈥?x 8 or x 16 bus width
鈥?Multiplexed Address/ Data
鈥?Pinout compatibility for all densities
Supply voltage:
鈥?3.0 V device: V
DD
= 2.7 to 3.6 V
Page size
鈥?x 8 device: (512 + 16 spare) bytes
鈥?x 16 device: (256 + 8 spare) words
Block size
鈥?x 8 device: (16 K + 512 spare) bytes
鈥?x 16 device: (8 K + 256 spare) words
Page Read / Program
鈥?Random access: 15 碌s (3 V) (max)
鈥?Sequential access: 50 ns (min)
鈥?Page program time: 200 碌s (typ)
Copy Back Program mode
鈥?Fast page copy without external buffering
Fast Block Erase
鈥?Block erase time: 2 ms (typ)
Status Register
Electronic signature
Chip Enable 鈥楧on鈥檛 care鈥?/div>
鈥?Simple interface with microcontroller
Wafer
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
Serial Number option
Hardware Data Protection
鈥?Program/Erase locked during Power
transitions
Data Integrity
鈥?100,000 Program/Erase cycles (with ECC)
鈥?10 years Data Retention
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
January 2008
Rev 3
1/48
www.numonyx.com
1

NAND01GW3A2BE06 产品属性

  • STMicroelectronics

  • 闪存

  • 8 bit

  • NAND

  • 1 Gbit

  • Sectored

  • Parallel

  • 3.6 V

  • 2.7 V

  • 20 mA

  • + 85 C

  • Tube

  • 16 KB x 8192

NAND01GW3A2BE06相关型号PDF文件下载

  • 型号
    版本
    描述
    厂商
    下载
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRONICS
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRON...
  • 英文版
    1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flas...
    STMICROELECTRONICS
  • 英文版
    1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flas...
    STMICROELECTRON...
  • 英文版
    256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...
    STMICROELECTRONICS
  • 英文版
    256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...
    STMICROELECTRON...
  • 英文版
    1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbi...
    STMICROELECTRON...
  • 英文版
    1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flas...
    STMICROELECTRONICS
  • 英文版
    1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flas...
    STMICROELECTRON...
  • 英文版
    2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
    ST
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRONICS
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRON...
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRONICS
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRON...
  • 英文版
    256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...
    STMICROELECTRONICS
  • 英文版
    256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...
    STMICROELECTRON...
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRONICS
  • 英文版
    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...
    STMICROELECTRON...
  • 英文版
    256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...
    STMICROELECTRONICS
  • 英文版
    256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...
    STMICROELECTRON...

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