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SST29EE010-70-4C-PHE Datasheet

  • SST29EE010-70-4C-PHE

  • 1 Mbit (128K x8) Page-Write EEPROM

  • 458.89KB

  • 30页

  • SST   SST

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1 Mbit (128K x8) Page-Write EEPROM
SST29EE010 / SST29VE010
SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories
Data Sheet
FEATURES:
鈥?Single Voltage Read and Write Operations
鈥?4.5-5.5V for SST29EE010
鈥?2.7-3.6V for SST29VE010
鈥?Superior Reliability
鈥?Endurance: 100,000 Cycles (typical)
鈥?Greater than 100 years Data Retention
鈥?Low Power Consumption
鈥?Active Current: 20 mA (typical) for 5V and
10 mA (typical) for 2.7V
鈥?Standby Current: 10 碌A (typical)
鈥?Fast Page-Write Operation
鈥?128 Bytes per Page, 1024 Pages
鈥?Page-Write Cycle: 5 ms (typical)
鈥?Complete Memory Rewrite: 5 sec (typical)
鈥?Effective Byte-Write Cycle Time: 39 碌s (typical)
鈥?Fast Read Access Time
鈥?4.5-5.5V operation: 70 and 90 ns
鈥?2.7-3.6V operation: 150 and 200 ns
鈥?Latched Address and Data
鈥?Automatic Write Timing
鈥?Internal V
PP
Generation
鈥?End of Write Detection
鈥?Toggle Bit
鈥?Data# Polling
鈥?Hardware and Software Data Protection
鈥?Product Identification can be accessed via
Software Operation
鈥?TTL I/O Compatibility
鈥?JEDEC Standard
鈥?Flash EEPROM Pinouts and command sets
鈥?Packages Available
鈥?32-lead PLCC
鈥?32-lead TSOP (8mm x 14mm, 8mm x 20mm)
鈥?32-pin PDIP
鈥?All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST29EE/VE010 are 128K x8 CMOS Page-Write
EEPROMs manufactured with SST鈥檚 proprietary, high-per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE/VE010 write with a single
power supply. Internal Erase/Program is transparent to the
user. The SST29EE/VE010 conform to JEDEC standard
pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE/
VE010 provide a typical Byte-Write time of 39 碌sec. The
entire memory, i.e., 128 Kbyte, can be written page-by-
page in as little as 5 seconds, when using interface features
such as Toggle Bit or Data# Polling to indicate the comple-
tion of a Write cycle. To protect against inadvertent write,
the SST29EE/VE010 have on-chip hardware and Software
Data Protection schemes. Designed, manufactured, and
tested for a wide spectrum of applications, the SST29EE/
VE010 are offered with a guaranteed Page-Write endur-
ance of 10,000 cycles. Data retention is rated at greater
than 100 years.
The SST29EE/VE010 are suited for applications that
require convenient and economical updating of pro-
gram, configuration, or data memory. For all system
applications, the SST29EE/VE010 significantly
improve performance and reliability, while lowering
power consumption. The SST29EE/VE010 improve
flexibility while lowering the cost for program, data, and
configuration storage applications.
To meet high density, surface mount requirements, the
SST29EE/VE010 are offered in 32-lead PLCC and 32-lead
TSOP packages. A 600-mil, 32-pin PDIP package is also
available. See Figures 1, 2, and 3 for pin assignments.
Device Operation
The SST Page-Write EEPROM offers in-circuit electrical
write capability. The SST29EE/VE010 does not require
separate Erase and Program operations. The internally
timed Write cycle executes both erase and program trans-
parently to the user. The SST29EE/VE010 have industry
standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/VE010
are compatible with industry standard EEPROM pinouts
and functionality.
漏2005 Silicon Storage Technology, Inc.
S71061-11-000
9/05
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

SST29EE010-70-4C-PHE 产品属性

  • Greenliant

  • 8 bit

  • 1 Mbit

  • Sectored

  • Asynchronous

  • Parallel

  • 70 ns

  • 5.5 V

  • 4.5 V

  • 30 mA

  • + 70 C

  • Through Hole

  • PDIP-32

  • Tube

  • 128 K x 8

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