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型号 简要描述 文件大小 厂家 下载
MMBT5551 NPN General Purpose Amplifier 500.65K FAIRCHILD [Fairchild Semiconductor]
MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 500.65K DIODES [Diodes Incorporated]
MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 500.65K TRSYS [TRSYS]
MMBT5551 Mini size of Discrete semiconductor elements 500.65K ETC [ETC]
MMBT5551 HIGH VOLTAGE TRANSISTOR NPN SILICON 500.65K ZOWIE [Zowie Technology Corporation]
MMBT5551 High Voltage Transistors 500.65K ONSEMI [ON Semiconductor]
MMBT5551 1401.12K 永裕泰
MMBT5551 1401.12K 永裕泰
MMBT5551 211.71K TD
MMBT5551 TRANS NPN 160V 0.6A SOT-23 320K
MMBT5551 SOT-23 TRANSISTOR(NPN) 1626.95K 金誉
MMBT5551 SOT-23 .15K 银河微电子
MMBT5551-7 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 47.88K DIODES [Diodes Incorporated]
MMBT5551-7-F Diodes Incorporated [NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR] 419.38K DIODES
MMBT5551-7-F TRANS NPN 160V 0.6A SOT23-3 212K
MMBT5551-A-AE3-B-R Unisonic Technologies [HIGH VOLTAGE SWITCHING TRANSISTOR] 51.51K UTC
MMBT5551-A-AE3-E-R Unisonic Technologies [HIGH VOLTAGE SWITCHING TRANSISTOR] 51.51K UTC
MMBT5551DW Dated:04/05/2013 Rev:01 TOP DYNAMIC MMBT5551DW NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. Absolute Maximum Ratings (T a = 25 ℃) Parameter Symbol Value Unit Collector Base Voltage V CBO 180 V Collector Emitter Voltage V CEO 160 V Emitter Base Voltage V EBO 6 V Collector Current I C 600 mA Power Dissipation P tot 200 mW Junction Temperature T j 150 ℃ Storage Temperature Range T stg - 55 to + 150 ℃ Characteristics at T amb =25 ℃ Parameter Symbol Min. Max. Unit DC Current Gain at V CE = 5 V, I C = 1 mA at V CE = 5 V, I C = 10 mA at V CE = 5 V, I C = 50 mA h FE h FE h FE 80 80 30 - 250 - - - - Collector Base Cutoff Current at V CB = 120 V I CBO - 50 nA Emitter Base Cutoff Current at V EB = 4 V I EBO - 50 nA Collector Base Breakdown Voltage at I C = 100 μA V (BR)CBO 180 - V Collector Emitter B 126.12K TD
MMBT5551L-A-AE3-C-R Unisonic Technologies [HIGH VOLTAGE SWITCHING TRANSISTOR] 51.51K UTC
MMBT5551L-B-AE3-C-R Unisonic Technologies [HIGH VOLTAGE SWITCHING TRANSISTOR] 51.51K UTC
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