2N366
TRANSISTOR | BJT | NPN | 50MA I(C) |...
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2N3660
Small Signal Transistors
CENTRAL
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2N3660
Small Signal Transistors
CENTRAL [Central Semiconductor Corp]
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2N3661
Small Signal Transistors
CENTRAL
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2N3661
Small Signal Transistors
CENTRAL [Central Semiconductor Corp]
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2N3662
TRANSISTOR | BJT | NPN | 12V V(BR)CE...
ETC
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2N3662
TRANSISTOR | BJT | NPN | 12V V(BR)CE...
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2N3663
NPN RF Transistor
FAIRCHILD
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2N3663
NPN RF Transistor
FAIRCHILD [Fairchild Semiconductor]
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2N3665
Bipolar NPN Device in a Hermetically...
SEME-LAB
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2n366晶体管:材料: ge；结构: npn；最大集电极功耗 (pc): 150mw；最大集电极，基极电压 (ucb): 30v；最大射极基极电压 (ueb): 2v；最大集电极电流 (ic max): 50ma；最高结温 2n366 (tj): 85℃；跃迁频率 (ft): 1.5mhz；电极电容 (cc), pf: 20；正向电流传输比 (hfe), min/max: 20min。 来源:qick
2n366被配置为音频反馈振荡器，它使用了一个图示的音频变压器。可以调整r1获得适合的操作和需要的音频短讯。 来源:panyueyingying
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