ture-compensating,鈥?EIA Class I ceramic materials. Modern
other rare earth oxides.
dielectrics available. Capacitance change with temperature
鈭?/div>
C from -55掳C
to +125掳C. Capacitance drift or hysteresis for C0G (NP0)
ceramics is negligible at less than 卤0.05% versus up to
卤2% for films. Typical capacitance change with life is less
than 卤0.1% for C0G (NP0), one-fifth that shown by most
other dielectrics. C0G (NP0) formulations show no aging
characteristics.
The C0G (NP0) formulation usually has a 鈥淨鈥?in excess
of 1000 and shows little capacitance or 鈥淨鈥?changes with
frequency. Their dielectric absorption is typically less than
0.6% which is similar to mica and most films.
PART NUMBER (see page 3 for complete part number explanation)
0805
Size
(L" x W")
5
Voltage
25V = 3
50V = 5
100V = 1
200V = 2
A
Dielectric
C0G (NP0) = A
101
Capacitance
Code
J
Capacitance
Tolerance
Preferred
K = 卤10%
J = 卤 5%
A
Failure
Rate
A = Not
Applicable
T
Terminations
T = Plated Ni
and Solder
2
Packaging
2 = 7" Reel
4 = 13" Reel
A
Special
Code
A = Std.
Product
PERFORMANCE CHARACTERISTICS
Capacitance Range
Capacitance Tolerances
0.5 pF to .1 碌F (1.0 卤0.2 Vrms, 1kHz, for
鈮?00
pF use 1 MHz)
Preferred 卤5%, 卤10%
others available: 卤.25 pF, 卤.5 pF, 卤1% (鈮?5pF), 卤2%(鈮?3pF), 卤20%
For values
鈮?/div>
10 pF preferred tolerance is 卤.5 pF, also available 卤.25 pF.
-55掳C to +125掳C
0 卤 30 ppm/掳C (EIA C0G)
25, 50, 100 & 200 VDC (+125掳C)
For values >30 pF: 0.1% max. (+25掳C and +125掳C)
For values
鈮?0
pF: 鈥淨鈥?= 400 + 20 x C (C in pF)
100,000 megohms min. or 1000 M鈩?- 碌F min., whichever is less
10,000 megohms min. or 100 M鈩?- 碌F min., whichever is less
250% of rated voltage for 5 seconds at 50 mamp max. current
1 卤 0.2 Vrms
For values
鈮?00
pF: 1 MHz
For values >100 pF: 1 KHz
Operating Temperature Range
Temperature Characteristic
Voltage Ratings
Dissipation Factor and 鈥淨鈥?/div>
Insulation Resistance
(+25掳C, RVDC)
Insulation Resistance
(+125掳C, RVDC)
Dielectric Strength
Test Voltage
Test Frequency
4
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