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1N5553US Datasheet

  • 1N5553US

  • This specification covers the performance requirements for s...

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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 19 July 2004.
INCH-POUND
MIL-PRF-19500/420H
19 April 2004
SUPERSEDING
MIL-PRF-19500/420G
30 December 2002
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,
TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US,
JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD,
JANHCE, JANKCA, JANKCD, AND JANKCE
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor
diodes. Four levels of product assurance are provided for each encapsulated device type as specified in
MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US
through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die.
1.3 Maximum ratings. Unless otherwise specified, T
C
= +25掳C and ratings apply to all case outlines.
Col. 1
Type
Col. 2
V
(BR)
Col. 3
V
RWM
and
V
(BR)min
Col. 4
I
O1
T
L
= +55掳C;
L = .375 inch
(1) (2) (3)
A dc
5
5
5
5
5
Col. 5
I
FSM
I
O
= 2 A dc
t
p
= 1/120 s
T
A
= +55掳C
A(pk)
100
100
100
100
100
Col. 6
T
J
Col. 7
I
O2
T
A
=
+55掳C
(2) (4)
A dc
3
3
3
3
3
Col. 8
T
STG
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
V dc
1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US
200
400
600
800
1,000
200
400
600
800
1,000
掳C
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
掳C
-65 to +175
-65 to +175
-65 to +175
-65 to +175
-65 to +175
(1) Derate linearly at 41.6 mA/掳C above T
L
= +55掳C at L = .375 inch (9.53 mm).
(2) An I
O
of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the
maximum junction temperature at or below +200掳C as proven by the junction temperature rise test (see 6.5).
Barometric pressure reduced:
1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet).
1N5553, 1N5554
- 33 mmHg (70,000 feet).
(3) Does not apply to surface mount devices.
(4) Derate linearly at 25 mA/掳C above T
A
= +55掳C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconduction@dscc.dla.mil
. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961

1N5553US 产品属性

  • 0现货查看交期

  • 1 : ￥88.96000散装

  • -

  • 散装

  • 在售

  • 标准

  • 800 V

  • 3A

  • 1.2 V @ 9 A

  • 标准恢复 >500ns，> 200mA（Io）

  • 2 μs

  • 1 μA @ 800 V

  • -

  • 表面贴装型

  • SQ-MELF，B

  • B，SQ-MELF

  • -65°C ~ 175°C

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