鈥?/div>
Low collector to emitter saturation voltage V
CE(sat)
: < 2.5 V
(3.0)
(1.5)
2.0
卤0.3
3.0
卤0.3
1.0
卤0.2
0.6
卤0.2
5.45
卤0.3
10.9
卤0.5
(1.5)
2.7
卤0.3
1
2
3
I
Absolute Maximum Ratings
T
C
=
25掳C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
T
C
= 25掳C
T
a
= 25掳C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
Rating
160
140
5
15
8
120
3.5
150
鈭?5
to
+150
掳C
掳C
Unit
V
V
V
A
A
W
20.0
卤0.5
(2.5)
Solder Dip
(1.5)
1: Base
2: Collector
3: Emitter
TOP-3L Package
Internal Connection
C
B
Junction temperature
Storage temperature
E
I
Electrical Characteristics
T
C
=
25掳C
Parameter
Collector cutoff current
Symbol
I
CBO
I
CEO
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
I
EBO
V
CEO
h
FE1
h
FE2 *
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Note) *: Rank classification
Rank
h
FE2
Q
S
P
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 160 V, I
E
= 0
V
CE
= 140 V, I
B
= 0
V
EB
= 5 V, I
C
= 0
I
C
= 30 mA, I
B
= 0
V
CE
= 5 V, I
C
= 1 A
V
CE
= 5 V, I
C
= 7 A
I
C
= 7 A, I
B
= 7 mA
I
C
= 7 A, I
B
= 7 mA
V
CE
= 10 V, I
C
= 0.5 A, f = 1 MHz
I
C
= 7 A, I
B1
= 7 mA, I
B2
=
鈭?
mA,
V
CC
= 50 V
20
2.0
6.0
1.2
140
2 000
5 000
30 000
2.5
3.0
V
V
MHz
碌s
碌s
碌s
Min
Typ
Max
100
100
100
Unit
碌A
碌A
碌A
V
5 000 to 15 000 7 000 to 21 000 8 000 to 30 000
(2.0)
1
1
2
3
4
