Transistor
2SD2240, 2SD2240A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
1.6卤0.15
Unit: mm
s
Features
q
q
q
0.4
0.8卤0.1
0.4
0.2
鈥?.05
0.15
鈥?.05
+0.1
High collector to emitter voltage V
CEO
.
Low noise voltage NV.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
1.6卤0.1
1.0卤0.1
0.5
1
0.5
3
2
0.75卤0.15
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD2240
2SD2240A
2SD2240
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
0.45卤0.1 0.3
(Ta=25藲C)
Ratings
150
185
150
185
5
100
50
125
125
鈥?5 ~ +125
Unit
V
emitter voltage 2SD2240A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?5
SS鈥揗ini Type Package
Marking symbol :
P
(2SD2240)
L
(2SD2240A)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter
voltage
2SD2240
2SD2240A
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= 100V, I
E
= 0
I
C
= 100碌A, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 30mA, I
B
= 3mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
150
2.3
150
150
185
5
130
330
1
V
MHz
pF
mV
min
typ
max
1
Unit
碌A
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
*1
h
FE1
Rank classification
Rank
h
FE
R
130 ~ 220
2SD2240
2SD2240A
PR
LR
S
185 ~ 330
PS
LS
Marking
Symbol
0 to 0.1
0.2卤0.1
+0.1
1
1
2
