Power Transistors
2SD2255
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1493
15.0卤0.5
Unit: mm
4.5卤0.2
4.0卤0.1
s
Features
q
q
q
4.0卤0.1
13.0卤0.5
10.5卤0.5
2.0卤0.1
15.0卤0.2
Optimum for 60W HiFi output
High foward current transfer ratio h
FE
: 5000 to 30000
Low collector to emitter saturation voltage V
CE(sat)
: <2.5V
20.0卤0.3
19.0卤0.3
蠁3.2卤0.1
16.2卤0.5
3.5
12.5
s
Solder Dip
2.0卤0.2
1.1卤0.1
1.4卤0.3
Absolute Maximum Ratings
(T
C
=25藲C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
160
140
5
12
7
70
2.5
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
5.45卤0.3
10.9卤0.5
1
2
3
0.6卤0.2
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25掳C
dissipation
Ta=25掳C
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?5(a)
TOP鈥? Package(a)
Internal Connection
C
B
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 160V, I
E
= 0
V
CE
= 140V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 6A
I
C
= 6A, I
B
= 6mA
I
C
= 6A, I
B
= 6mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 6A, I
B1
= 6mA, I
B2
= 鈥?mA,
V
CC
= 50V
20
2.5
5.0
2.5
140
2000
5000
30000
2.5
3.0
V
V
MHz
碌s
碌s
碌s
min
typ
max
100
100
100
Unit
碌A
碌A
碌A
V
FE2
Rank classification
Q
P
Rank
h
FE2
5000 to 15000 8000 to 30000
1
1
2
3
