BYV42E Datasheet

  • BYV42E

  • Rectifier diodes ultrafast, rugged

  • 47.94KB

  • 7页

  • PHILIPS

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Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
鈥?Low forward volt drop
鈥?Fast switching
鈥?Soft recovery characteristic
鈥?Reverse surge capability
鈥?High thermal cycling performance
鈥?Low thermal resistance
BYV42E, BYV42EB series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
V
F
鈮?/div>
0.85 V
I
O(AV)
= 30 A
I
RRM
= 0.2 A
t
rr
鈮?/div>
28 ns
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV42E series is supplied in the SOT78 conventional leaded package.
The BYV42EB series is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
1
anode 2 (a)
cathode (k)
SOT78 (TO220AB)
tab
SOT404
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
BYV42E / BYV42EB
T
mb
鈮?/div>
144藲C
-
-
-
-
-
-
-
-
-
-40
-
MIN.
-150
150
150
150
30
30
150
160
0.2
0.2
150
150
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
藲C
藲C
I
RRM
I
RSM
T
stg
T
j
square wave
未
= 0.5; T
mb
鈮?/div>
108 藲C
t = 25
碌s; 未
= 0.5;
T
mb
鈮?/div>
108 藲C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
碌s; 未
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
碌s
current per diode
Storage temperature
Operating junction temperature
1. It is not possible to make connection to pin 2 of the SOT404 package
2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting
tab.
July 1998
1
Rev 1.200

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