TetraFET
D2231UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
5.50 卤 0.15
1.27 卤 0.05
2 PL.
2 PL.
0.47
1.65
2 PL.
0.3 R.
4 PL.
2.313
卤 0.2
4
3
3.00 2.07
0.381
2 PL. 2 PL.
5
1.27
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
7.5W 鈥?12.5V 鈥?1GHz
SINGLE ENDED
0.360
卤 0.005
6
1.27
6.50 卤
0.15
2
1
0.47
2 PL.
0.80
4 PL.
4.90 卤 0.15
7
1.27
8
0.10 R.
TYP.
FEATURES
0.10
TYP.
0.508
0.10
TYP.
鈥?SIMPLIFIED AMPLIFIER DESIGN
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
F-0127 PACKAGE
PIN 1 鈥?SOURCE
PIN 2 鈥?DRAIN
PIN 3 鈥?DRAIN
PIN 4 鈥?SOURCE
PIN 5 鈥?SOURCE
PIN 6 鈥?GATE
PIN 7 鈥?GATE
PIN 8 鈥?SOURCE
鈥?VERY LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
鈥?LOW NOISE
鈥?HIGH GAIN 鈥?10 dB MINIMUM
Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.
APPLICATIONS
鈥?/div>
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25掳C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Semelab plc.
Power Dissipation
Drain 鈥?Source Breakdown Voltage
Gate 鈥?Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Website
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
17.5W
40V
卤20V
6A
鈥?5 to 150掳C
200掳C
Prelim. 2/99
1
2
