TetraFET
D2293UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W 鈥?12.5V 鈥?500MHz
SINGLE ENDED
FEATURES
鈥?SIMPLIFIED AMPLIFIER DESIGN
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
鈥?VERY LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
鈥?LOW NOISE
SOT 171
PIN 1
PIN 3
PIN 5
SOURCE
GATE
SOURCE
PIN 2
PIN 4
PIN 6
SOURCE
DRAIN
SOURCE
鈥?HIGH GAIN 鈥?11 dB MINIMUM
APPLICATIONS
鈥?/div>
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25掳C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain 鈥?Source Breakdown Voltage
Gate 鈥?Source Breakdown Voltage
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
42W
40V
卤20V
8A
鈥?5 to 150掳C
200掳C
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 7/99
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