UTC D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
*Collector current up to 5A
* D965SS : Collector-Emitter voltage up to 20 V
* D965ASS : Collector-Emitter voltage up to 30 V
2
1
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
3
MARKING
(D965SS)
MARKING
(D965ASS)
SOT-23
D65
D65A
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25掳C ,unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
D965SS
D965ASS
Emitter-base voltage
Collector dissipation(Ta=25掳C
)
Collector current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
RATING
40
20
30
7
750
5
150
-65 ~ +150
UNIT
V
V
V
mW
A
掳C
掳C
ELECTRICAL CHARACTERISTICS
(Ta=25掳C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
D965SS
D965ASS
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
TEST CONDITIONS
Ic=100碌A,I
E
=0
Ic=1mA,I
B
=0
MIN
40
20
30
7
TYP
MAX
UNIT
V
V
V
nA
nA
I
E
=10碌A,Ic=0
V
CB
=10V,I
E
=0
V
EB
=7V,Ic=0
100
100
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-016,B
1
2
3
