Semiconductor
FSJ9055D,
FSJ9055R
55A, -60V, 0.029 Ohm, Rad Hard,
SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Harris Semiconductor
has developed a series of Radiation Hardened MOSFETs
speci铿乧ally designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose hard-
ness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacri铿乧ed.
The Harris portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
铿乪ld-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Harris Semiconductor for any
desired deviations from the data sheet.
June 1998
Features
鈥?55A, -60V, r
DS(ON)
= 0.029鈩?/div>
鈥?Total Dose
- Meets Pre-RAD Speci铿乧ations to 100K RAD (Si)
鈥?Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
鈥?Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
鈥?Photo Current
- 6.0nA Per-RAD(Si)/s Typically
鈥?Neutron
- Maintain Pre-RAD Speci铿乧ations
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Ordering Information
RAD LEVEL
10K
10K
100K
100K
100K
SCREENING LEVEL
Commercial
TXV
Commercial
TXV
Space
PART NUMBER/BRAND
FSJ9055D1
FSJ9055D3
FSJ9055R1
FSJ9055R3
FSJ9055R4
Symbol
D
G
Formerly available as type TA17750.
S
Package
TO-254AA
G
S
D
CAUTION: Beryllia Warning per MIL-S-19500
refer to package speci铿乧ations.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
漏
Harris Corporation 1998
File Number
4415.1
3-221
1
2
3
4
5
6
7
8
