FSTYC9055D3 Datasheet

  • FSTYC9055D3

  • Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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  • 8页

  • INTERSIL   INTERSIL

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FSTYC9055D, FSTYC9055R
TM
Data Sheet
June 2000
File Number
4755.1
Radiation Hardened, SEGR Resistant
P-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs speci铿乧ally
designed for commercial and military space applications.
Immunity to Single Event Effects (SEE) is combined with
100K RADs of total dose hardness to provide devices which
are ideally suited to harsh space environments. The dose
rate and neutron tolerance necessary for military
applications have not been sacri铿乧ed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
铿乪ld-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Formerly available as type TA17750T.
Features
鈥?64A, -60V, r
DS(ON)
= 0.023鈩?/div>
鈥?Total Dose
- Meets Pre-RAD Speci铿乧ations to 100K RAD (Si)
鈥?Typical SEE Immunity
- LET of 36MeV/mg/cm
2
with V
DS
up to 80% of Rated
Breakdown and V
GS
of 0V
- LET of 26MeV/mg/cm
2
with V
DS
up to 100% of Rated
Breakdown and V
GS
of 5V Off-Bias
鈥?Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
鈥?Photo Current
- 6nA Per-RAD (Si)/s Typically
鈥?Neutron
- Maintain Pre-RAD Speci铿乧ations
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Symbol
D
G
S
Ordering Information
RAD LEVEL
10K
10K
100K
100K
100K
SCREENING LEVEL PART NUMBER/BRAND
Commercial
TXV
Commercial
TXV
Space
FSTYC9055D1
FSTYC9055D3
FSTYC9055R1
FSTYC9055R3
FSTYC9055R4
Packaging
SMD2
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright
Intersil Corporation 2000

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