GS9012D/E7 Datasheet

  • GS9012D/E7

  • TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-92

  • 21.97KB

  • 2页

  • ETC

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GS9012
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-226AA (TO-92)
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
Features
鈥?/div>
PNP Silicon Epitaxial Planar Transistors for switching
and amplifier applications. Especially suitable for AF-
driver stages and low power output stages such as
portable radios in class-B push-pull operation.
鈥?Complementary to GS9013
Mechanical Data
Case:
TO-92 Plastic Package
Weight:
approx. 0.18g
Packaging Codes/Options:
E6/Bulk-5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
max.
鈭?/div>
0.022 (0.55)
0.098 (2.5)
Bottom
View
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation at T
amb
= 25掳C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
R
胃JA
T
j
T
S
Ratings at 25掳C ambient temperature unless otherwise specified
Value
鈥?0
鈥?0
鈥?
鈥?00
625
(1)
200
(1)
150
鈥?5 to +150
Unit
V
V
V
mA
mW
掳C/W
掳C
掳C
Notes:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
Document Number 88195
10-May-02
www.vishay.com
1

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