High Voltage IGBT
V
CES
I
C90
2.0 A
2.0 A
V
CE(SAT)
2.7 V
3.5 V
IXGP 2N100
1000 V
IXGP 2N100A
1000 V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
STG
Weight
Test Conditions
T
J
= 25掳C to 150掳C
T
J
= 25掳C to 150掳C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25掳C
T
C
= 90掳C
T
C
= 25掳C, 1 ms
V
GE
= 15 V, T
J
= 125掳C, R
G
= 150W
Clamped inductive load
T
C
= 25掳C
Maximum Ratings
1000
1000
卤20
卤30
4
2
8
I
CM
= 6
@ 0.8 V
CES
25
-55 ... +150
150
-55 ... +150
4
300
W
掳C
掳C
掳C
g
掳C
V
V
V
V
A
A
A
A
TO-220
1
2
3
2 = Collector
4 = Collector
4
1 = Gate
3 = Emitter
Features
Max. Lead Temperature for
Soldering
(1.6mm from case for 10s)
聲
International
聲
Low V
CE(sat)
standard package
Symbol
Test Conditions
(T
J
= 25掳C unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 25碌A, V
GE
= 0 V
I
C
= 25碌A, V
CE
= V
GE
V
CE
= 0.8 V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
= 卤20 V
I
C
= I
C90
, V
GE
= 15 V
IXGP2N100
IXGP2N100A
T
J
=
25掳C
T
J
= 125掳C
Characteristic Values
Min. Typ.
Max.
1000
2.5
5.0
10
200
+ 50
2.7
3.5
V
V
碌A
碌A
nA
V
V
聲
High current handling capability
聲
MOS Gate turn-on
- drive simplicity
- for low on-state conduction losses
Applications
聲
Capacitor discharge
聲
Anode triggering of thyristors
聲
DC choppers
聲
Switched-mode and resonant-mode
power supplies.
漏 2000 IXYS All rights reserved
95514C (9/00)
1
2
