IXTH6N80A Datasheet

  • IXTH6N80A

  • N-Channel Enhancement Mode

  • 91.27KB

  • 4页

  • IXYS   IXYS

扫码查看芯片数据手册

上传产品规格书

PDF预览

Standard
Power MOSFET
N-Channel Enhancement Mode
V
DSS
IXTH/IXTM 6 N80 800 V
IXTH/IXTM 6 N80A 800 V
I
D25
6A
6A
R
DS(on)
1.8
鈩?/div>
1.4
鈩?/div>
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25掳C to 150掳C
T
J
= 25掳C to 150掳C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25掳C
T
C
= 25掳C, pulse width limited by T
JM
T
C
= 25掳C
Maximum Ratings
800
800
卤20
卤30
6
24
180
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
W
掳C
掳C
掳C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
掳C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Features
q
q
q
q
q
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Symbol
Test Conditions
Characteristic Values
(T
J
= 25掳C, unless otherwise specified)
min. typ. max.
800
2
4.5
卤100
T
J
= 25掳C
T
J
= 125掳C
250
1
1.8
1.4
V
V
nA
碌A
mA
鈩?/div>
鈩?/div>
Applications
q
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 250
碌A
V
GS
=
卤20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
q
q
q
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
q
6N80
6N80A
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
q
q
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
91542E(5/96)
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629

IXTH6N80A 产品属性

  • 30

  • 分离式半导体产品

  • FET - 单

  • -

  • MOSFET N 通道,金属氧化物

  • 标准型

  • 800V

  • 6A

  • 1.4 欧姆 @ 3A,10V

  • 4.5V @ 250µA

  • 130nC @ 10V

  • 2800pF @ 25V

  • 180W

  • 通孔

  • TO-247-3

  • TO-247AD

  • 管件

IXTH6N80A相关型号PDF文件下载

  • 型号
    版本
    描述
    厂商
    下载
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | ...
    ETC
  • 英文版
    N-Channel Enhancement Mode
    IXYS
  • 英文版
    N-Channel Enhancement Mode
    IXYS [IXYS...
  • 英文版
    Standard Power MOSFET
    IXYS
  • 英文版
    Standard Power MOSFET
    IXYS [IXYS...
  • 英文版
    TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 7A I(D) | ...
    ETC
  • 英文版
    Standard Power MOSFET P-Channel Enhancement Mode Avalanche R...
    IXYS
  • 英文版
    MOSFET P-CH 500V 7A TO-247AD
  • 英文版
    Standard Power MOSFET P-Channel Enhancement Mode Avalanche R...
    IXYS [IXYS...
  • 英文版
    TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 8A I(D) | ...
    ETC
  • 英文版
    Standard Power MOSFET P-Channel Enhancement Mode Avalanche R...
    IXYS
  • 英文版
    MOSFET P-CH 500V 8A TO-247
  • 英文版
    Standard Power MOSFET P-Channel Enhancement Mode Avalanche R...
    IXYS [IXYS...
  • 英文版
    Standard Power MOSFET - P-Channel Enhancement Mode Avalanche...
    IXYS [IXYS...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 9A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) |...
    ETC
  • 英文版
    10 AMP, 600V, 0.55-ohm / 0.7-ohm
    IXYS [IXYS...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 10A I(D) |...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10A I(D) |...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 10A I(D) |...
    ETC

扫码下载APP,
一键连接广大的电子世界。

在线人工客服

买家服务:
卖家服务:
技术客服:

0571-85317607

网站客服电话

0571-85317606

客服在线时间周一至周五
9:00-17:30

关注官方微信号,
第一时间获取资讯。

建议反馈

联系人:

联系方式:

按住滑块,拖拽到最右边
>>
感谢您向阿库提出的宝贵意见,您的参与是维库提升服务的动力!意见一经采纳,将有感恩红包奉上哦!