The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 25 October 1999.
INCH-POUND
MIL-PRF-19500/509C
25 July 1999
SUPERSEDING
MIL-S-19500/509B
25 June 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPES 2N6338 AND 2N6341
JAN, JANTX, JANTXV AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon power transistors. Four levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See Figure 1, (similar to TO 鈥?204AA formally TO - 3).
1.3 Maximum ratings.
Types
P
T
1/ 2/
T
A
= +25掳C
P
T
T
C
= +100掳C
V
CBO
V
CEO
V
EBO
I
C
I
B
T
STG
and T
OP
W
2N6338
2N6341
200
200
W
112
112
V dc
120
180
V dc
100
150
V dc
6.0
6.0
A dc
25
25
A dc
10
10
掳C
-65 to +200
-65 to +200
1/ Between T
C
= +25掳C and T
C
= +200掳C, linear derating factor (average) = 1.14 W/掳C.
2/ Maintain voltage and current according to the safe operating area shown in figure 4.
1.4 Primary electrical characteristics at T
A
= 25掳C.
Limit
h
FE1
1/
V
BE(SAT)
V
CE
(
SAT)
C
obo
1 MHz
鈮?/div>
f
鈮?/div>
1 MHz
V
CB
= 10 V dc
I
E
= 0
pF
---
450
I
C
= 25 A dc
V
CE
= 2.0 V dc
I
C
= 10 A dc
V
CE
= 2.0 V dc
I
C
= 10 A dc
I
B
= 1.0 V dc
I
C
= 25 A dc
I
B
= 2.5 A dc
I
C
= 10 A dc
I
B
= 1.0 A dc
V dc
Min
Max
12
---
30
120
---
1.8
V dc
---
1.8
V dc
---
1.0
1/ Pulsed, (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
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