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K4M56163PE-RG Datasheet

  • K4M56163PE-RG

  • 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

  • 114.00KB

  • 12页

  • SAMSUNG   SAMSUNG

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K4M56163PE - R(B)G/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
FEATURES
鈥?1.8V power supply.
鈥?LVCMOS compatible with multiplexed address.
鈥?Four banks operation.
鈥?MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
鈥?EMRS cycle with address key programs.
鈥?All inputs are sampled at the positive going edge of the system
clock.
鈥?Burst read single-bit write operation.
鈥?Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
鈥?DQM for masking.
鈥?Auto refresh.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
64ms refresh period (8K cycle).
Commercial Temperature Operation (-25掳C ~ 70掳C).
Extended Temperature Operation (-25掳C ~ 85掳C).
54Balls FBGA with 0.8mm ball pitch
( -RXXX : Leaded, -BXXX : Lead Free).
Mobile-SDRAM
GENERAL DESCRIPTION
The K4M56163PE is 268,435,456 bits synchronous high data
rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,
fabricated with SAMSUNG鈥檚 high performance CMOS technol-
ogy. Synchronous design make a device controlled precisely
with the use of system clock and I/O transactions are possible
on every clock cycle. The range of operating frequencies, pro-
grammable burst lengths and programmable latencies allow the
same device to be useful for a variety of high bandwidth and
high performance memory system applications.
ORDERING INFORMATION
Part No.
K4M56163PE-R(B)G/F90
K4M56163PE-R(B)G/F1L
Max Freq.
111MHz(CL=3), 83MHz(CL=2)
105MHz(CL=3), 66MHz(CL=2)
*1
Interface
LVCMOS
Package
54 FBGA
Leaded (Lead Free)
- R(B)G : Low Power, Extended Temperature(-25掳C ~ 85掳C)
- R(B)F : Low Power, Commercial Temperature(-25掳C ~ 70掳C)
Notes :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific
purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
February 2004

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