64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev. No.
Rev. 0.0
Rev. 1.0
History
Initial release with preliminary.
Relax DC characteristics.
Item
I
CC
12ns
15ns
20ns
Add 48-fine pitch BGA.
Changed device part name for FP-BGA.
Item
Previous
Symbol
Z
ex) K6R1016C1C-Z -> K6R1016C1C-F
Changed device ball name for FP-BGA.
Previous
I/O1 ~ I/O8
I/O9 ~ I/O16
Added Data Retention Characteristics.
Add 10ns part.
Delete 20ns speed bin
Draft Data
Aug. 5. 1998
Sep. 7. 1998
Previous
90mA
88mA
85mA
Changed
95mA
93mA
90mA
Sep. 17. 1998
Nov. 5. 1998
Changed
F
Preliminary
Final
Remark
Preliminary
Preliminary
Rev. 2.0
Rev. 2.1
Rev. 2.2
Dec. 10. 1998
Changed
I/O9 ~ I/O16
I/O1 ~ I/O8
Mar. 3. 1999
Mar. 3. 2000
Sep.24. 2001
Final
Rev. 3.0
Rev. 3.1
Rev. 4.0
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
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