KSP12
KSP12
Darlington Transistor
鈥?Collector-Emitter Voltage: V
CES
=20V
鈥?Collector Power Dissipation: P
C
(max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
a
=25掳C unless otherwise noted
Symbol
V
CES
V
EBO
P
C
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
20
10
625
150
-55 ~ 150
Units
V
V
mW
掳C
掳C
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CES
I
CBO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Test Condition
I
C
=100碌A, I
B
=0
V
CB
=15V, I
E
=0
V
CE
=15V, I
B
=0
V
EC
=10V, I
C
=0
V
CE
=5V, I
C
=10mA
I
C
=10mA, I
B
=0.01mA
V
CE
=5V, I
C
=10mA
20K
1
1.4
V
V
Min.
20
Typ.
.
Max.
100
100
100
Units
V
nA
nA
nA
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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