L8801P Datasheet

  • L8801P

  • SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

  • 43.24KB

  • 2页

  • POLYFET

扫码查看芯片数据手册

上传产品规格书

PDF预览

polyfet rf devices
L8801P
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F
t
transistors with high
input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
10.0 Watts Single Ended
Package Style S08 P
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
30 Watts
Junction to
Case Thermal
Resistance
o
5.00 C/W
Maximum
Junction
Temperature
o
150 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
3.0 A
RF CHARACTERISTICS (
SYMBOL
Gps
PARAMETER
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
10
40
TYP
10.0 WATTS OUTPUT )
MAX
UNITS
dB
%
20:1
Relative
TEST CONDITIONS
Idq = 0.20 A, Vds =
28.0
V, F =
Idq = 0.20 A, Vds =
28.0
V, F =
500
MHz
500
MHz
畏
VSWR
Idq = 0.20 A, Vds =
28.0
V, F =
500
MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
PARAMETER
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
1
0.8
0.90
5.50
30.0
1.0
15.0
MIN
65
1.0
1
7
TYP
MAX
UNITS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
TEST CONDITIONS
Ids =
0.10 mA, Vgs = 0V
Vds = 28.0 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.10 A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 2.50 A
Vgs = 20V, Vds = 10V
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 12/13/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

L8801P相关型号PDF文件下载

您可能感兴趣的PDF文件资料

热门IC型号推荐

扫码下载APP,
一键连接广大的电子世界。

在线人工客服

买家服务:
卖家服务:
技术客服:

0571-85317607

网站客服电话

0571-85317606

客服在线时间周一至周五
9:00-17:30

关注官方微信号,
第一时间获取资讯。

建议反馈
返回顶部

建议反馈

联系人:

联系方式:

按住滑块,拖拽到最右边
>>
感谢您向阿库提出的宝贵意见,您的参与是维库提升服务的动力!意见一经采纳,将有感恩红包奉上哦!