MOS
(PTY) LTD.
M2006C
PIR Motion Detector
Microsystems On Silicon
Member of ELMOS Semiconductor AG
General Description___________
The M2006C integrated circuit combines all required
functions for a single chip Passive Infra Red (PIR)
motion detector.
A relay and a LED output are provided for interfacing to
an occupancy detect or alarm system.
One or two PIR sensors connect directly to the PIR
inputs. The pull-down resistors and DC decoupling
circuitry are integrated on chip. The PIR signal is
converted to a 15 bit digital value.
The parameters for sensitivity, pulse count and timing
are set by means of connecting the corresponding
inputs to VDD, VSS or leaving them open.
The voltage level on the temperature compensation
input is converted to a digital value with 4 bit resolution.
All signal processing is performed digitally.
Applications_________________
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PIR motion detection
Intruder detection
Occupancy detection
Motion sensor lights
Features_____________________
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Digital signal processing
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On chip supply regulator with wide operating voltage
range
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Low power consumption
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Temperature compensation input
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Differential PIR sensor input
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Selectable relay output polarity
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Selectable pulse count and timing algorithm for
motion detection
Single Sensor Application Circuit________________________________
VSS
U1
14
VSSA
VB
10
C1
D1
Supply
C2
11
12
VDDA
PIRIN
LED
20
L1
Alarm
R2
RE1
IRA1
RELAY
13
NPIRIN
VDD
19
Alarm
2
1
T hre shold /Sensitivity
PT0
5
PT1
4
OSC
PT0
SENS
PT1
RPOL
R1
N ear
Far
VDD
3
S2
8
9
18
VSS
P ulse C ount
DP0
DP1
17
16
DP0
DP1
TEST
VSS
C3
0V
T ime Window
DT0
DT1
7
6
DT0
DT1
M2006C
TCOMP
15
VDD
R3
N1
NTC
R4
R5
www.mos.co.za
Rev. 1.1
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