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MTP23P06V Datasheet

  • MTP23P06V

  • TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM

  • 195.48KB

  • 8页

  • MOTOROLA   MOTOROLA

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MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP23P06V/D
TMOS
Power Field Effect Transistor
TMOS V is a new technology designed to achieve an on鈥搑esis-
tance area product about one鈥揾alf that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E鈥揊ET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
鈩?/div>
Data Sheet
V
鈩?/div>
MTP23P06V
Motorola Preferred Device
P鈥揅hannel Enhancement鈥揗ode Silicon Gate
TMOS POWER FET
23 AMPERES
60 VOLTS
RDS(on) = 0.120 OHM
TM
D
New Features of TMOS V
鈥?/div>
On鈥搑esistance Area Product about One鈥揾alf that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
鈥?/div>
Faster Switching than E鈥揊ET Predecessors
Features Common to TMOS V and TMOS E鈥揊ETS
鈥?/div>
Avalanche Energy Specified
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
Static Parameters are the Same for both TMOS V and
TMOS E鈥揊ET
MAXIMUM RATINGS
(TC = 25掳C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Gate鈥搕o鈥揝ource Voltage
鈥?Non鈥搑epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous @ 25掳C
Drain Current
鈥?Continuous @ 100掳C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ 25掳C
Derate above 25掳C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?STARTING TJ = 25掳C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 23 Apk, L = 3.0 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
G
S
CASE 221A鈥?6, Style 5
TO鈥?20AB
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
Value
60
60
卤
15
卤
25
23
15
81
90
0.60
鈥?55 to 175
794
1.67
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/掳C
掳C
mJ
掳C/W
掳C
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from Case for 10 seconds
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET, Designer鈥檚 and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola TMOS
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1

MTP23P06V 产品属性

  • 50

  • 分离式半导体产品

  • FET - 单

  • -

  • MOSFET P 通道，金属氧化物

  • 标准型

  • 60V

  • 23A

  • 120 毫欧 @ 11.5A，10V

  • 4V @ 250µA

  • 50nC @ 10V

  • 1620pF @ 25V

  • 90W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • MTP23P06VOS

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