MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
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by MTP2955V/D
TMOS
Power Field Effect Transistor
TMOS V is a new technology designed to achieve an on鈥搑esis-
tance area product about one鈥揾alf that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E鈥揊ET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V
鈥?/div>
On鈥搑esistance Area Product about One鈥揾alf that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
鈥?/div>
Faster Switching than E鈥揊ET Predecessors
鈩?/div>
Data Sheet
V
鈩?/div>
MTP2955V
TMOS POWER FET
12 AMPERES
60 VOLTS
RDS(on) = 0.230 OHM
P鈥揅hannel Enhancement鈥揗ode Silicon Gate
TM
D
G
S
Features Common to TMOS V and TMOS E鈥揊ETS
鈥?/div>
Avalanche Energy Specified
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
鈥?/div>
Static Parameters are the Same for both TMOS V and TMOS E鈥揊ET
CASE 221A鈥?9, Style 5
TO鈥?20AB
MAXIMUM RATINGS
(TC = 25掳C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Gate鈥搕o鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous
Drain Current
鈥?Continuous @ 100掳C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25掳C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25掳C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
Value
60
60
卤
15
卤
25
12
8.0
42
60
0.40
鈥?55 to 175
216
2.5
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/掳C
掳C
mJ
掳C/W
掳C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Designer鈥檚, E鈥揊ET and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
REV 3
漏
Motorola TMOS
Motorola, Inc. 1997
Power MOSFET Transistor Device Data
1
MTP2955V 产品属性
50
分离式半导体产品
FET - 单
-
MOSFET P 通道，金属氧化物
标准型
60V
12A
230 毫欧 @ 6A，10V
4V @ 250µA
30nC @ 10V
770pF @ 25V
60W
通孔
TO-220-3
TO-220AB
管件
MTP2955VOS
MTP2955V相关型号PDF文件下载
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英文版
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
-
英文版
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
MOTOROLA [...
-
英文版
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SI...
-
英文版
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SI...
MOTOROLA [...
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
FAIRCHILD ...
-
英文版
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
-
英文版
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
MOTOROLA [...
-
英文版
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
-
英文版
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
-
英文版
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
MOTOROLA [...
-
英文版
N-Channel Power MOSFETs, 20 A, 60-100 V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 20 A, 60-100 V
FAIRCHILD ...
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