MTP2P50E Datasheet_PDF文件下载_芯片资料查询

Power Field Effect Transistor

Designer's

MTP2P50E

Motorola Preferred Device

P鈥揅hannel Enhancement鈥揗ode Silicon Gate

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage鈥揵locking capability without

degrading performance over time. In addition, this advanced TMOS

E鈥揊ET is designed to withstand high energy in the avalanche and

commutation modes. The new energy efficient design also offers a

drain鈥搕o鈥搒ource diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

鈥?/div>

Robust High Voltage Termination

鈥?/div>

Avalanche Energy Specified

鈥?/div>

Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

鈥?/div>

Diode is Characterized for Use in Bridge Circuits

鈥?/div>

IDSS and VDS(on) Specified at Elevated Temperature

G

S

TMOS POWER FET

2.0 AMPERES

500 VOLTS

RDS(on) = 6.0 OHM

庐

D

CASE 221A鈥?6, Style 5

TO鈥?20AB

MAXIMUM RATINGS

(TC = 25掳C unless otherwise noted)

Rating

Drain鈥揝ource Voltage

Drain鈥揋ate Voltage (RGS = 1.0 M鈩?

Gate鈥揝ource Voltage 鈥?Continuous

Gate鈥揝ource Voltage

鈥?Non鈥揜epetitive (tp

鈮?/div>

10 ms)

Drain Current 鈥?Continuous

Drain Current

鈥?Continuous @ 100掳C

Drain Current

鈥?Single Pulse (tp

鈮?/div>

10

碌s)

Total Power Dissipation

Derate above 25掳C

Operating and Storage Temperature Range

Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25掳C

(VDD = 100 Vdc, VGS = 10 Vdc, IL = 4.0 Apk, L = 10 mH, RG = 25

鈩?

Thermal Resistance 鈥?Junction to Case

Thermal Resistance

鈥?Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds

Symbol

VDSS

VDGR

VGS

VGSM

ID

IDM

PD

TJ, Tstg

EAS

R

胃JC

R

胃JA

TL

Value

500

卤

20

卤

40

2.0

1.6

6.0

75

0.6

鈥?55 to 150

80

1.67

62.5

260

Unit

Vdc

Vpk

Adc

Apk

Watts

W/掳C

掳C

mJ

掳C/W

掳C

Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions

鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.

E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 1

漏

Motorola TMOS

Motorola, Inc. 1995

Power MOSFET Transistor Device Data

1

标准包装
50
类别
分离式半导体产品
家庭
FET - 单
系列
-
FET 型
MOSFET P 通道，金属氧化物
FET 特点
标准型
漏极至源极电压(Vdss)
500V
电流 - 连续漏极(Id) @ 25° C
2A
开态Rds（最大）@ Id, Vgs @ 25° C
6 欧姆 @ 1A，10V
Id 时的 Vgs(th)（最大）
4V @ 250µA
闸电荷(Qg) @ Vgs
27nC @ 10V
输入电容 (Ciss) @ Vds
1183pF @ 25V
功率 - 最大
75W
安装类型
通孔
封装/外壳
TO-220-3
供应商设备封装
TO-220AB
包装
管件
其它名称
MTP2P50EOS

MTP2P50E相关型号PDF文件下载

型号

版本

描述

厂商

下载
MTP2955

英文版

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM

MTP2955
MTP2955

英文版

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM

MOTOROLA [...

MTP2955
MTP2N20

英文版

POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SI...

MTP2N20
MTP2N20

英文版

POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SI...

MOTOROLA [...

MTP2N20
MTP2N35

英文版

N-Channel Power MOSFETs, 2.25A, 350-400V

FAIRCHILD

MTP2N35
MTP2N35

英文版

N-Channel Power MOSFETs, 2.25A, 350-400V

FAIRCHILD ...

MTP2N35
MTP2N40

英文版

N-Channel Power MOSFETs, 2.25A, 350-400V

FAIRCHILD

MTP2N40
MTP2N40

英文版

N-Channel Power MOSFETs, 2.25A, 350-400V

FAIRCHILD ...

MTP2N40
MTP2N45

英文版

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

FAIRCHILD

MTP2N45
MTP2N45

英文版

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

FAIRCHILD ...

MTP2N45
MTP2N50

英文版

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

FAIRCHILD

MTP2N50
MTP2N50

英文版

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

FAIRCHILD ...

MTP2N50
MTP2N60

英文版

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

MTP2N60
MTP2N60

英文版

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

MOTOROLA [...

MTP2N60
MTP2P50

英文版

TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

MTP2P50
MTP2P50

英文版

TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

MOTOROLA [...

MTP2P50
MTP20N06

英文版

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

MTP20N06
MTP20N06

英文版

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

MOTOROLA [...

MTP20N06
MTP20N08

英文版

N-Channel Power MOSFETs, 20 A, 60-100 V

FAIRCHILD

MTP20N08
MTP20N08

英文版

N-Channel Power MOSFETs, 20 A, 60-100 V

FAIRCHILD ...

MTP20N08

MTP2P50E Datasheet

PDF预览

MTP2P50E 产品属性

MTP2P50E相关型号PDF文件下载

您可能感兴趣的PDF文件资料

热门IC型号推荐

MTP2P50E Datasheet

PDF预览

MTP2P50E 产品属性

MTP2P50E相关型号PDF文件下载

您可能感兴趣的PDF文件资料

热门IC型号推荐

建议反馈

PDF纠错X