TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
Designer's
MTP8N50E
TMOS POWER FET
8.0 AMPERES
500 VOLTS
RDS(on) = 0.8 OHM
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage鈥揵locking capability without
degrading performance over time. In addition, this advanced TMOS
E鈥揊ET is designed to withstand high energy in the avalanche and
commutation modes. This new energy efficient design also offers a
drain鈥搕o鈥搒ource diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters, PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional safety margin
against unexpected voltage transients.
鈥?/div>
Robust High Voltage Termination
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
庐
D
G
S
CASE 221A鈥?6, Style 5
TO-220AB
MAXIMUM RATINGS
(TJ = 25掳C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M
W
)
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Gate鈥搕o鈥揝ource Voltage
鈥?Non鈥搑epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous @ TC = 25掳C
Drain Current
鈥?Continuous @ TC = 100掳C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
m
s)
Total Power Dissipation @ TC = 25掳C
Derate above 25掳C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?STARTING TJ = 25掳C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 8.0 Apk, L = 16 mH, RG = 25
W
)
Thermal Resistance
鈥?Junction鈥搕o鈥揅ase
鈥?Junction鈥搕o鈥揂mbient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from Case for 5 sec.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
500
500
卤20
卤40
8.0
5.0
32
125
1.0
鈥?55 to 150
510
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/掳C
掳C
mJ
R
q
JC
R
q
JA
TL
1.0
62.5
260
掳C/W
掳C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
REV 2
漏
Motorola TMOS
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
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TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
-
英文版
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
MOTOROLA [...
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英文版
POWER FIELD EFFECT TRANSISTOR
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英文版
POWER FIELD EFFECT TRANSISTOR
MOTOROLA [...
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英文版
POWER FIELD EFFECT TRANSISTOR
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英文版
POWER FIELD EFFECT TRANSISTOR
MOTOROLA [...
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英文版
POWER FIELD EFFECT TRANSISTOR
MOTOROLA [...
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英文版
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
-
英文版
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM
-
英文版
TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM
MOTOROLA [...
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