NAND02GW3B2AN1 Datasheet

IC型号：
NAND02GW3B2AN1
PDF描述：
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flas...
文件大小：
633.70KB
PDF页数：
64页
芯片厂家：
STMICROELECTRONICS

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NAND01G-B

NAND02G-B

1 Gbit, 2 Gbit,

2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

Feature summary

鈼?/div>

High Density NAND Flash memories

鈥?/div>

Up to 2 Gbit memory array

Up to 64Mbit spare area

Cost effective solutions for mass

storage applications

x8 or x16 bus width

Multiplexed Address/ Data

Pinout compatibility for all densities

FBGA

鈼?/div>

NAND interface

鈥?/div>

TSOP48 12 x 20mm

鈼?/div>

Supply voltage

鈥?/div>

1.8V device: V

= 1.7 to 1.95V

3.0V device: V

= 2.7 to 3.6V

x8 device: (2048 + 64 spare) Bytes

x16 device: (1024 + 32 spare) Words

x8 device: (128K + 4K spare) Bytes

x16 device: (64K + 2K spare) Words

Random access: 25碌s (max)

Sequential access: 50ns (min)

Page program time: 300碌s (typ)

鈻?/div>

鈼?/div>

Page size

鈥?/div>

VFBGA63 9.5 x 12 x 1mm

TFBGA63 9.5 x 12 x 1.2mm

鈼?/div>

Block size

鈥?/div>

Serial Number option

Data protection

鈥?/div>

Hardware and Software Block Locking

Hardware Program/Erase locked during

Power transitions

100,000 Program/Erase cycles

10 years Data Retention

鈼?/div>

Page Read/Program

鈥?/div>

鈼?/div>

Data integrity

鈥?/div>

鈼?/div>

Copy Back Program mode

鈥?/div>

Fast page copy without external

buffering

Internal Cache Register to improve the

program and read throughputs

Block erase time: 2ms (typ)

ECOPACK

庐

packages

Development tools

鈥?/div>

Error Correction Code software and

hardware models

Bad Blocks Management and Wear

Leveling algorithms

File System OS Native reference

software

Hardware simulation models

鈼?/div>

Cache Program and Cache Read modes

鈥?/div>

鈼?/div>

Fast Block Erase

鈥?/div>

Status Register

Electronic Signature

Chip Enable 鈥榙on鈥檛 care鈥?/div>

鈥?/div>

for simple interface with microcontroller

鈼?/div>

February 2006

Rev 4.0

1/64

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型号

版本

描述

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NAND01G-A

英文版

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...

NAND01G-A
NAND01G-A

英文版

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...

STMICROELECTRON...

NAND01G-A
NAND01G-B

英文版

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flas...

NAND01G-B
NAND01G-B

英文版

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flas...

STMICROELECTRON...

NAND01G-B
NAND01G-M

英文版

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...

NAND01G-M
NAND01G-M

英文版

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...

STMICROELECTRON...

NAND01G-M
NAND01G-N

英文版

1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbi...

STMICROELECTRON...

NAND01G-N
NAND02G-B

英文版

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flas...

NAND02G-B
NAND02G-B

英文版

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flas...

STMICROELECTRON...

NAND02G-B
NAND04GW3

英文版

2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

ST

NAND04GW3
NAND128-A

英文版

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...

NAND128-A
NAND128-A

英文版

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...

STMICROELECTRON...

NAND128-A
NAND256-A

英文版

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...

NAND256-A
NAND256-A

英文版

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...

STMICROELECTRON...

NAND256-A
NAND256-M

英文版

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...

NAND256-M
NAND256-M

英文版

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...

STMICROELECTRON...

NAND256-M
NAND512-A

英文版

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...

NAND512-A
NAND512-A

英文版

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 W...

STMICROELECTRON...

NAND512-A
NAND512-M

英文版

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...

NAND512-M
NAND512-M

英文版

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Mem...

STMICROELECTRON...

NAND512-M

NAND02GW3B2AN1 Datasheet

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