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PRELIMINARY

RT3AMMM

Composite Transistor

For Low Frequency Amplify Application

Silicon Pnp Epitaxial Type

DESCRIPTION

RT3AMMM is a composite transistor built with two

2SA1235A chips in SC-88 package.

OUTLINE DRAWING

2.1

1.25

鈶?/div>

0.65

鈶?/div>

0.2

Unit锛歮m

FEATURE

Silicon pnp epitaxial type

Each transistor elements are independent.

Mini package for easy mounting

2.0

APPLICATION

For low frequency amplify application

0.65

0锟?frac12;锟?.1

Tr1

Tr2

TERMINAL

CONNECTOR

鈶狅細EMITTER1

鈶★細BASE1

鈶細COLLECTOR2

鈶ｏ細EMITTER2

鈶わ細BASE2

鈶?COLLECTOR1

JEITA锛歋C-88

MAXIMUM RATING (Ta=25鈩?

SYMBOL

V

CBO

V

EBO

V

CEO

I

C

P

C

T

j

T

stg

PARAMETER

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

Collector dissipation锛圱otal,Ta=25鈩冿級

Junction temperature

Storage temperature

RATING

-60

-6

-50

-200

150

锛?25

-55锟?frac12;锟斤紜125

UNIT

V

mA

mW

鈩?/div>

6

5

4

MARKING

.

锛?/div>

AMM

2

3

ISAHAYA ELECTRONICS CORPORATION

0.13

0.9

型号

版本

描述

厂商

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RT3AMMM

英文版

RT3AMMM

ETC

RT3AMMM
RT3AMMM

英文版

Composite Transistor

ISAHAYA

RT3AMMM
RT3AMMM

英文版

RT3AMMM

ETC [ETC]

RT3AMMM

RT3AMMM Datasheet

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