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S1L54424 Datasheet

  • S1L54424

  • HIGH DENSITY GATE ARRAY

  • 96.26KB

  • 12页

  • EPSON   EPSON

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DATA SHEET
ASIC
S1L50000
S1L50000 SERIES HIGH DENSITY GATE ARRAY
聦
DESCRIPTION
EPSON Electronics America, Inc.鈥檚
S1L50000
Series is a family of ultra high-speed VLSI CMOS
gate array utilizing a 0.35碌m 鈥渟ea-of-gates鈥?architecture. The
S1L50000H
products feature 5V
tolerant I/O buffers.
鈥?/div>
鈥?/div>
鈥?/div>
Ultra-high-speed, high density and low power consumption
Low voltage operation: 3.3V and 2.0V
Number of raw gates: 28,710 ~ 815,468 gates
聦
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
Process
Integration
Operating Speed
0.35碌m 2/3/4 layer metalization CMOS process
A maximum of 815,468 gates (2 input NAND gate equivalent)
Internal gates: 140 ps (3.3V Typ), 210 ps (2.0V Typ)
(2-input pair NAND, F/O = 2, Typical wire load)
Input buffer: 380 ps (5.0V Typ) Built-in level shifter is used.
400 ps (3.3V Typ), 1.30 ns (2.0V Typ)
(F/O = 2, Typical wire load)
Output buffer: 2.12 ns (5.0V Typ) Built-in level shifter is used.
2.02 ns (3.3 V Typ), 3.90 ns (2.0V Typ)
(C
L
= 15 pF)
Input/Output TTL/CMOS/LVTTL compatible
TTL, CMOS, LVTTL, TTL Schmitt, CMOS Schmitt, LVTTL Schmitt, PCI
Built-in pull-up and pull-down resistors can be usable.
(2 types for each resistor value)
Normal, 3-state, bi-directional, PCI
I
OL
= 0.1, 1, 3, 8, 12, 24 mA selectable
(Built-in level shifter is used at 5.0V)
I
OL
= 0.1, 1, 2, 6, 12 mA selectable (at 3.3V)
I
OL
= 0.05, 0.3, 0.6, 2, 4 mA selectable (at 2.0V)
Asynchronous 1-port, asynchronous 2-port
Operation supported by using level-shifter circuit
Internal logic: Operation supported by low voltage
I/O Buffer:
Built-in interfaces of both high and low voltages possible
鈥?/div>
鈥?/div>
I/F Levels
Input Modes
鈥?/div>
鈥?/div>
Output Modes
Output Drive
鈥?/div>
鈥?/div>
RAM
Dual Power
鈥?/div>
Operation possible at V
DD
= 2.0
卤
0.2V
EPSON ELECTRONICS AMERICA, INC.
i
150 River Oaks Pkwy
i
San Jose, CA 95134
i
Tel: (408) 922-0200
i
Fax: (408) 922-0238
1

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