S2386-18K Datasheet

IC型号：
S2386-18K
PDF描述：
Si photodiode For visible to IR, general-purpose photometry
文件大小：
119.05KB
PDF页数：
4页
芯片厂家：
HAMAMATSU

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PHOTODIODE

Si photodiode

S2386 series

For visible to IR, general-purpose photometry

Features

Applications

High sensitivity

Low dark current

High reliability

High linearity

Analytical equipment

Optical measurement equipment

General ratings / Absolute maximum ratings

Type No.

Dimensional

outline/

Window

material *

鉃€/K

鉃?L

鉃?K

Package

(mm)

TO-18

TO-5

TO-8

Active

area size

(mm)

1.1 脳 1.1

2.4 脳 2.4

3.6 脳 3.6

3.9 脳 4.6

5.8 脳 5.8

Effective

active area

(mm

)

1.2

5.7

17.9

-40 to +100

-55 to +125

Absolute maximum ratings

Operating

Storage

Reverse

temperature

voltage

Topr

Tstg

Max.

(V)

(掳C)

S2386-18K

S2386-18L

S2386-5K

S2386-44K

S2386-45K

S2386-8K

Electrical and optical characteristics (Typ. Ta=25 掳C, unless otherwise noted)

Terminal

Dark

Short circuit

Temp. Rise time capacitance Shunt

current coefficient

resistance

current

=0 V

Rsh

Isc

=10 m V of I

=0 V V

=10 mV

Type No.

100

CID

=1 k鈩?/div>

Max.

f=10 kHz

GaP H e- N e GaAs

Min. Typ.

位p

LED laser LE D Min. Typ.

560 nm 633 nm 930 nm (碌A) (碌A) (pA) (times/掳 C) (碌s)

(G鈩? (G鈩?

(nm)

(pF)

S2386-18K

1.3

0.4

140

5 100

S2386-18L

5.7

S2386-5K

4.4 6.0

1.8

730

2 50

320 to 1100 960 0.6 0.38 0.43 0.59

1.12

S2386-44K

9.6 12

3.6

1600 0.5

S2386-45K

5.5

2300 0.3

S2386-8K

4300 0.2 10

* Window material K: borosilicate glass, L: lens type borosilicate glass

Spectral Peak

response sensitivity

range wavelength

位

位p

Photo sensitivity

(A/W)

NEP

=0 V

位=位p

(W/Hz

1/2

)

6.8 脳 10

-16

9.6 脳 10

-16

1.4 脳 10

-15

2.1 脳 10

-15

型号

版本

描述

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